Description

74C910 256 Bit TRI-STATE Random Access Read/Write Memory

General Description
The MM54C910/MM74C910 is a 64 word by 4-bit random access memory. Inputs consist of six address lines, four data input lines, a WE, and a ME line. The six address lines are internally decoded to select one of the 64 word locations. An internal address register latches the address information on the positive to negative transition of ME. The TRI-STATE outputs allow for easy memory expansion.

Features
Y Supply voltage range 3.0V to 5.5V
Y High noise immunity 0.45VCC (typ.)
Y TTL compatible fan out 1 TTL load
Y Input address register
Y Low power consumption 250 nW/package (typ.)
(chip enabled or disabled)
Y Fast access time 250 ns (typ.) at 5.0V
Y TRI-STATE outputs
Y High voltage inputs